View THBT200S1_68576.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
THBT200S1
TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes A.S.D.TM
FEATURES DUAL BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : - IPP = 35 A, 10/1000 s. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION
This monolithic protection device has been especially designed to protect subscriber line cards.The THBT200S device is particularly suitable to protect ring generator relay against transient overvoltages.
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDARDS: CCITT K20 : VDE 0433 : VDE 0878 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700 s 5/310 s 10/700 s 5/310 s 1.2/50 s 1/20 s 2/10 s 2/20s 2/10 s 2/10s 10/1000s 10/1000s 1kV 25A 2kV 45A (*) 1.5kV 40A 2.5kV 80A (*) 2.5kV 80A 1kV 35A (*)
SCHEMATIC DIAGRAM
NC
1
T ip
2
GND
3
(*) with series resistors or PTC.
R in g
4
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
February 1998
Ed: 2
1/7
THBT200S1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 s 8/20 s 2/10 s tp = 20ms Value 35 70 80 20 - 40 to + 150 + 150 230 Unit A
ITSM Tstg Tj TL
Non repetitive surge peak on-state current Storage and operating junction temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s
A C C
Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s
tp=1000s tp=310s tp=10s
% I PP 100
50
0 tr tp
t
THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 80 Unit C/W
2/7
(R)
THBT200S1
ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol VRM IRM VBR VBO IH IBO IPP C Parameter Stand-offvoltage Leakage current at VRM Continuous reverse voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance
IBO IH IRM VRM VBR VBO V Ipp I
1 - PARAMETERS RELATED TO ONE TRISIL. (Between TIP and GND or RING and GND) IRM max. @ VRM VBR @ IR min. max. VBO
@
IBO max.
IH min. note 2 mA 800 mA 150
C max. note 3 pF 200
min. note 1
A 10
Note 1 : Note 2 : Note 3 :
V 180
V 200
mA 1
V 290
mA 150
See reference test circuit 1 for IH, IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz.
2 - PARAMETERS RELATED TO TIP and RING TRISIL. IRM max. A 10 V 180 @ VRM C max. pF 200
3/7
(R)
THBT200S1
REFERENCE TEST CIRCUIT 1 FOR IBO and VBO parameters :
t
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 V RMS, R2 = 240 .
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2.
R D.U.T. V BAT = - 48 V Surge generator - VP
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max.
4/7
(R)
THBT200S1
APPLICATION CIRCUIT Typical line card protection concept
RING GENERATOR
-V
bat
LINE A T E S T R E L A Y S
PTC
TIP
RING RELAY
SLIC
RING
THBT200S1
LINE B
PTC
THDTxxx or LCPxxx
FUNCTIONAL DESCRIPTION
Line A TIP
LINE A AND LINE B PROTECTION. Each line (TIP and RING) is protected by a bidirectional Trisil, which triggers at a maximum voltage equal to the VBO. The differential mode is also assured at VBO.
LineB
Ring
5/7
(R)
THBT200S1
Fig. 1 : Relative variation of holding current versus junction temperature.
IH [ Tj ] 1.0 0.8 0.6 0.4 0.2 Tj (C) 0.0 0 20 40 60 80 100 120 140 IH [ Tj = 25C ]
Fig. 2 : Surge peak current versus overload duration.
ITSM(A)
30
F=50Hz Tj initial=25 C
25 20 15 10 5
t(s)
0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Fig. 3 : Peak on state voltage versus peak on state current (typical values).
Fig. 4 : Capacitance versus reverse applied voltage (typical values).
1000
100
10 1
10
100
200
6/7
(R)
THBT200S1
ORDER CODE
THBT
200
S1
35A VERSION
BIDIRECTIONAL TRISIL Package : S = SIP3 BREAKDOWN VOLTAGE
MARKING : Package SIP3 Types THBT200S1 Marking TBT200S1
PACKAGE MECHANICAL DATA SIP3 Plastic REF.
B
DIMENSIONS Millimetres Min. Typ. Max. Min. 7.10 2.80 1.50 0.50 1.35 0.38 2.54 7.62 10.50 3.30 1.50 0.130 0.059 1.75 0.053 0.50 0.015 0.100 0.200 0.413 10.15 0.020 0.069 0.020 0.110 1.90 0.059 0.075 0.400 Inches Typ. Max. 0.280
A
I A
a1 a2 B b1
a2 b1 b2 Z e e3
a1 L c1
b2 c1 e e3 I L
Packaging: Productssupplied in antistatic tubes. Weight : 0.55g
Z
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7
(R)

▲Up To Search▲

Price & Availability of THBT200S1

	To Download THBT200S1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .